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To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstratein-situdynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser’s emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge. 

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.